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data sheet 1 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 general description the ap2122 series are positive voltage regulator ics fabricated by cmos proce ss. each of these ics con- sists of a voltage reference, an error amplifier, a resis- tor network for setting output voltage, a current limit circuit for current pr otection and a chip enable circuit . the ap2122 series feature high ripple rejection, low dropout voltage, low noise, high output voltage accu- racy, and low current consumption which make them ideal for use in various battery-powered devices. the ap2122 series have 1.5v, 1.8v, 2.5v, 2.8v, 3.0v, 3.2v and 3.3v versions. the ap2122 are available in standard sot-23-5 pack- age. features low dropout voltage at i out =100ma: 150mv typical (except 1.5v version) low standby current: 0.1 a typical low quiescent current: 25 a typical high ripple rejection: 70db typical f=10khz maximum output current: more than 150ma (300ma limit) extremely low noise: 30 vrms (10hz to 100khz) excellent line regulation: 4mv typical excellent load regulation: 12mv typical high output voltage accuracy: 2% excellent line and lo ad transient response compatible with low esr ceramic capacitor (as low as 1 f) applications mobile phones, cordless phones mp3/4 portable electronic devices cameras, video recorders sub-board power supplies for telecom equip- ment battery powered equipment figure 1. package type of ap2122 sot-23-5
data sheet 2 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 pin configuration figure 2. pin configuration of ap2122 (top view) k package (sot-23-5) nc v out gnd 1 2 3 4 5 ce pin description pin number pin name function 1v out regulated output voltage 2 gnd ground 3v in input voltage 4 ce active high enable input pin. l ogic high=enable, l ogic low=shutdown 5 nc no connection v in
data sheet 3 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 functional block diagram figure 3. functional block diagram of ap2122 vref current limit v in ce v out gnd 2 3 1 4
data sheet 4 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 package temperature range condition part number marking id packing type sot-23-5 -40 to 85 o c active high (pull-down resistor built-in) ap2122ak-1.5tre1 e2z tape & reel active high (pull-down resistor built-in) ap2122ak-1.8tre1 e2u tape & reel active high (pull-down resistor built-in) ap2122ak-2.5tre1 e2v tape & reel active high (pull-down resistor built-in) ap2122ak-2.8tre1 e2w tape & reel active high (pull-down resistor built-in) ap2122ak-3.0tre1 e2x tape & reel active high (pull-down resistor built-in) ap2122ak-3.2tre1 e3y tape & reel active high (pull-down resistor built-in) ap2122ak-3.3tre1 e2y tape & reel bcd semiconductor's pb-free products, as designated with "e1" suffix in th e part number, are rohs compliant. circuit type package e1: lead free ap2122 - tr: tape and reel ordering information 1.5: fixed output 1.5v 2.5: fixed output 2.5v 3.0: fixed output 3.0v k: sot-23-5 a: active high (pull-down resistor built-in) 1.8: fixed output 1.8v 2.8: fixed output 2.8v 3.2: fixed output 3.2v 3.3: fixed output 3.3v
data sheet 5 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 parameter symbol value unit input voltage v in 6.5 v enable input voltage v ce -0.3 to v in +0.3 v output current i out 300 ma junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10sec) t lead 260 o c thermal resistance (note 2) ja 250 o c/w esd (human body model) esd 2000 v esd (machine model) esd 200 v absolute maximum ratings (note 1) parameter symbol min max unit input voltage v in 26 v operating junction temperature range t j -40 85 o c recommended operating conditions note 1: stresses greater than those li sted under "absolute maximu m ratings" may cause permanen t damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolut e maximum ratings" for extended periods may affect device reliability. note 2: absolute maximum rati ngs indicate limits beyond which damage to the component may occur. electrical specifica- tions do not apply when operating the device outside of its operating ra tings. the maximum allowabl e power dissipation is a function of the maximum junction temperature, t j(max), the junction-to-ambient thermal resistance, ja, and the ambient tem- perature, t a. the maximum allowable power diss ipation at any ambient temperat ure is calculated using: p d(max) =(t j(max) - t a )/ ja. exceeding the maximum allowable power dissipation will result in excessive die temperature.
data sheet 6 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 electrical characteristics parameter symbol conditions min typ max unit output voltage v out v in =2.5v 1ma i out 30ma 1.47 1.5 1.53 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =2.5v 1ma i out 80ma 12 40 mv line regulation v rline 2.3v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 400 600 mv i out =100ma 400 600 i out =150ma 400 600 quiescent current i q v in =2.5v, i out = 0ma 25 50 a standby current i std v in =2.5v v ce in off mode 0.1 1 a power supply rejection ratio psrr ripple 0.5vp-p, f=10khz v in =2.5v 70 db output voltage temperature coefficient ? v out / ? t i out =30ma 150 v/ o c ( ? v out /v out )/ ? t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms ce "high" voltage ce i nput voltage "high" 1.5 v ce "low" voltage ce i nput voltage "low" 0.25 v ce pull-down internal resistance r pd 2.5 5 10 m ? (v in =2.5v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) ap2122-1.5 electrical characteristics
data sheet 7 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 parameter symbol conditions min typ max unit output voltage v out v in =2.8v 1ma i out 30ma 1.764 1.8 1.836 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =2.8v 1ma i out 80ma 12 40 mv line regulation v rline 2.3v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 150 300 i out =150ma 200 400 quiescent current i q v in =2.8v, i out = 0ma 25 50 a standby current i std v in =2.8v v ce in off mode 0.1 1 a power supply rejection ratio psrr ripple 0.5vp-p, f=10khz v in =2.8v 70 db output voltage temperature coefficient ? v out / ? t i out =30ma 180 v/ o c ( ? v out /v out )/ ? t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms ce "high" voltage ce input voltage "high" 1.5 v ce "low" voltage ce input voltage "low" 0.25 v ce pull-down internal resistance r pd 2.5 5 10 m ? (v in =2.8v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) electrical characteristics (continued) ap2122-1.8 electrical characteristics
data sheet 8 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 electrical characteristics (continued) parameter symbol conditions min typ max unit output voltage v out v in =3.5v 1ma i out 30ma 2.45 2.5 2.55 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =3.5v 1ma i out 80ma 12 40 mv line regulation v rline 3v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 150 300 i out =150ma 200 400 quiescent current i q v in =3.5v, i out = 0ma 25 50 a standby current i std v in =3.5v v ce in off mode 0.1 1 a power supply rejection ratio psrr ripple 0.5vp-p, f=10khz v in =3.5v 70 db output voltage temperature coefficient ? v out / ? t i out =30ma 250 v/ o c ( ? v out /v out )/ ? t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms ce "high" voltage ce input voltage "high" 1.5 v ce "low" voltage ce input voltage "low" 0.25 v ce pull-down internal resistance r pd 2.5 5 10 m ? (v in =3.5v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) ap2122-2.5 electrical characteristics
data sheet 9 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 parameter symbol conditions min typ max unit output voltage v out v in =3.8v 1ma i out 30ma 2.744 2.8 2.856 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =3.8v 1ma i out 80ma 12 40 mv line regulation v rline 3.3v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 150 300 i out =150ma 200 400 quiescent current i q v in =3.8v, i out = 0ma 25 50 a standby current i std v in =3.8v v ce in off mode 0.1 1 a power supply rejection ratio psrr ripple 0.5vp-p, f=10khz v in =3.8v 70 db output voltage temperature coefficient ? v out / ? t i out =30ma 280 v/ o c ( ? v out /v out )/ ? t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms ce "high" voltage ce in put voltage "high" 1.5 v ce "low" voltage ce input voltage "low" 0.25 v ce pull-down internal resistance r pd 2.5 5 10 m ? (v in =3.8v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) electrical characteristics (continued) ap2122-2.8 electrical characteristics
data sheet 10 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 parameter symbol conditions min typ max unit output voltage v out v in =4v 1ma i out 30ma 2.94 3.0 3.06 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =4v 1ma i out 80ma 12 40 mv line regulation v rline 3.5v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 150 300 i out =150ma 200 400 quiescent current i q v in =4v, i out = 0ma 25 50 a standby current i std v in =4v v ce in off mode 0.1 1 a power supply rejection ratio psrr ripple 0.5vp-p, f=10khz v in =4v 70 db output voltage temperature coefficient ? v out / ? t i out =30ma 300 v/ o c ( ? v out /v out )/ ? t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms ce "high" voltage ce i nput voltage "high" 1.5 v ce "low" voltage ce i nput voltage "low" 0.25 v ce pull-down internal resistance r pd 2.5 5 10 m ? (v in =4v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) electrical characteristics (continued) ap2122-3.0 electrical characteristics
data sheet 11 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 electrical characteristics (continued) parameter symbol conditions min typ max unit output voltage v out v in =4.2v 1ma i out 30ma 3.136 3.2 3.264 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =4.2v 1ma i out 80ma 12 40 mv line regulation v rline 3.7v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 150 300 i out =150ma 200 400 quiescent current i q v in =4.2v, i out = 0ma 25 50 a standby current i std v in =4.2v v ce in off mode 0.1 1 a power supply rejection ratio psrr ripple 0.5vp-p, f=10khz v in =4.2v 70 db output voltage temperature coefficient ? v out / ? t i out =30ma 320 v/ o c ( ? v out /v out )/ ? t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms ce "high" voltage ce input voltage "high" 1.5 v ce "low" voltage ce input voltage "low" 0.25 v ce pull-down internal resistance r pd 2.5 5 10 m ? (v in =4.2v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) ap2122-3.2 electrical characteristics
data sheet 12 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 parameter symbol conditions min typ max unit output voltage v out v in =4.3v 1ma i out 30ma 3.234 3.3 3.366 v input voltage v in 6v output current i out v in -v out =1v 150 ma load regulation v rload v in =4.3v 1ma i out 80ma 12 40 mv line regulation v rline 3.8v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 150 300 i out =150ma 200 400 quiescent current i q v in =4.3v, i out = 0ma 25 50 a standby current i std v in =4.3v v ce in off mode 0.1 1 a power supply rejection ratio psrr ripple 0.5vp-p, f=10khz v in =4.3v 70 db output voltage temperature coefficient ? v out / ? t i out =30ma 330 v/ o c ( ? v out /v out )/ ? t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms ce "high" voltage ce in put voltage "high" 1.5 v ce "low" voltage ce input voltage "low" 0.25 v ce pull-down internal resistance r pd 2.5 5 10 m ? (v in =4.3v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) ap2122-3.3 electrical characteristics electrical characteristics (continued)
data sheet 13 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 typical performance characteristics figure 4. output volt age vs. output current figure 6. output vo ltage vs. input voltage 0 50 100 150 200 250 300 350 0.0 0.3 0.6 0.9 1.2 1.5 output voltage (v) output current (ma) ap2122-1.5 v in =2.0v v in =2.5v v in =3.0v 01234567 0.00 0.25 0.50 0.75 1.00 1.25 1.50 output voltage (v) input voltage (v) ap2122-1.5 i out =30ma 0 50 100 150 200 250 300 350 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 output voltage (v) output current (ma) ap2122-3.0 v in =3.3v v in =4v v in =6v figure 5. output voltage vs. output current 01234567 2.00 2.25 2.50 2.75 3.00 3.25 3.50 output voltage (v) input voltage (v) ap2122-3.0 i out =30ma figure 7. output voltage vs. input voltage
data sheet 14 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 typical performance ch aracteristics (continued) figure 8. dropout vo ltage vs. output current 0 40 80 120 160 200 0.0 0.1 0.2 0.3 0.4 0.5 0.6 minimum operating requirement dropout voltage (v) output current (ma) ap2122-1.5 figure 10. output voltage vs. junction temperature -25 0 25 50 75 100 125 1.40 1.42 1.44 1.46 1.48 1.50 1.52 1.54 1.56 1.58 1.60 ap2122-1.5 v in =2.5v i out =30ma output voltage (v) junction temperature ( o c) 0 40 80 120 160 200 0.0 0.1 0.2 0.3 0.4 0.5 0.6 dropout voltage (v) output current (ma) ap2122-3.0 figure 9. dropout voltage vs. output current -25 0 25 50 75 100 125 2.90 2.92 2.94 2.96 2.98 3.00 3.02 3.04 3.06 3.08 3.10 ap2122-3.0 v in =4v i out =30ma output voltage (v ) junction temperature ( o c) figure 11. output voltage vs. junction temperature
data sheet 15 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 typical performance ch aracteristics (continued) figure 12. supply current vs. input voltage 01234567 0 10 20 30 40 50 60 ap2122-1.5 i out =0ma supply current ( a) input voltage (v) figure 14. supply current vs. junction temperature -25 0 25 50 75 100 125 0 5 10 15 20 25 30 35 40 supply current ( a) junction temperature ( o c) ap2122-1.5 v in =2.5v i out =0ma 01234567 0 10 20 30 40 50 60 supply current ( a) input voltage (v) ap2122-3.0 i out =0ma figure 13. supply curr ent vs. input voltage -25 0 25 50 75 100 125 0 5 10 15 20 25 30 35 40 supply current ( a) junction temperature ( o c) ap2122-3.0 v in =4v i out =0ma figure 15. supply current vs. junction temperature
data sheet 16 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 typical performance ch aracteristics (continued) ? v out (0.05v/div) v in ( 1 v / d i v ) figure 16. line transient (conditions: i out =30ma, c in =1 f, c out =1 f) time (40 s/div) ap2122-1.5 0 2.5 3.5 0.05 figure 18. load transient (conditions: v in =2.5v, c in =1 f, c out =1 f) v out (0.1v/div) i out (50ma/div) time (200 s/div) ap2122-1.5 0 100 1.5 1.4 ap2122-3.0 figure 17. line transient (conditions: i out =30ma, c in =1 f, c out =1 f) ap2122-3.0 time (200 s/div) figure 19. load transient (conditions: v in =4v, c in =1 f, c out =1 f) time (20 s/div) -0.05 4.5 ? v out (0.05v/div) v in ( 1 v / d i v ) 0 4 5 0.05 -0.05 6 1.6 50 i out (100ma/div) 0 200 3.0 2.9 3.1 100 v out (0.1v/div) 5.5 -0.1 -0.1 7 1.7 -50 3.2 -100
data sheet 17 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 10 100 1k 10k 100k 0 10 20 30 40 50 60 70 80 90 100 psrr (db) frequency (hz) ap2122-3.0 v in =4v i out =30ma c in =c out =1 f typical performance ch aracteristics (continued) figure 20. psrr vs. frequency 10 100 1k 10k 100k 1m 0 20 40 60 80 100 psrr (db) frequency (hz) ap2122-1.5 v in =2.5v i out =30ma c in =c out =1 f figure 21. psrr vs. frequency
data sheet 18 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 typical application figure 22. typical application of ap2122 note: filter capacitors are required at the ap2122's input and output. 1 f capacitor is required at the input. the minimum output capacitance required for stability should be more than 1 f with esr from 0.01 ? to 100 ?. ceramic capacitors are recommended. v in ap2122-3.0 c in 1 f c out 1 f v out v in v out gnd ce nc v in =4v v out =3v
data sheet 19 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2122 mechanical dimensions sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 1 . 0 5 0 ( 0 . 0 4 1 ) 0.300(0.012) 0.950(0.037) 1 . 0 5 0 ( 0 . 0 4 1 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 1 . 2 5 0 ( 0 . 0 4 9 ) 0 . 1 0 0 ( 0 . 0 0 4 ) 1 . 1 5 0 ( 0 . 0 4 5 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951, fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808, fax: +886-2-2656 2806 usa office bcd semiconductor corporation 3170 de la cruz blvd., suite 105, santa clara, ca 95054-2411, u.s.a - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com

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